amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC637 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz v03.0709 general description features functional diagram the hm c637 is a gaas mmi c mesfe t distributed p ower amplifer die which operates between dc and 6 g h z. the amplifer provides 14 db of gain, +41 dbm output ip 3 and +29 dbm of output power at 1 db gain compression while requiring 400ma from a +12v supply. gain fatness is excellent at 0.5 db from dc to 6 g h z making the hm c637 ideal for ew , e c m , r adar and test equipment applications. the hm c637 amplifer i / o s are internally matched to 50 o hms facilitating integration into m utli-chip- m odules ( m c m s). all data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). p 1db o utput p ower: +29 dbm gain: 14 db o utput ip 3: +41 dbm bias s upplies: +12v, +6v, -1v 50 o hm m atched i nput/ o utput die s ize: 2.98 x 2.48 x 0.1 mm typical applications the hm c637 is ideal for: ? telecom i nfrastructure ? m icrowave r adio & v s at ? m ilitary & s pace ? test i nstrumentation ? f iber o ptics electrical specifcations, t a = +25 c, vdd= +12v, vgg2= +6v, idd= 400ma* p arameter m in. typ. m ax. units f requency r ange dc - 6 g h z gain 11 14 db gain f latness 0.5 db gain variation o ver temperature 2 db/ c i nput r eturn l oss 13 db o utput r eturn l oss 18 db o utput p ower for 1 db compression ( p 1db) 29 dbm s aturated o utput p ower ( p sat) 30 dbm o utput third o rder i ntercept ( ip 3) 41 dbm n oise f igure 5 db s upply current ( i dd) 400 ma * adjust vgg1 between -2v to 0v to achieve idd= 400ma typical.
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature HMC637 v03.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz -30 -20 -10 0 10 20 0 2 4 6 8 s21 s11 s22 response (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 +25c +85c -55c return loss (db) frequency (ghz) 0 3 6 9 12 0 2 4 6 8 +25c +85c -55c noise figure (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 +25c +85c -55c isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 +25c +85c -55c return loss (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 +25c +85c -55c gain (db) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com p1db vs. temperature psat vs. temperature output ip3 vs. temperature gain, power & output ip3 vs. supply voltage @ 3 ghz, fixed vgg HMC637 v03.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz 10 15 20 25 30 35 40 45 11.5 12 12.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) vdd (v) 20 25 30 35 40 45 50 55 60 0 2 4 6 8 +25c +85c -55c ip3 (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 2 4 6 8 +25c +85c -55c psat (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 2 4 6 8 +25c +85c -55c p1db (dbm) frequency (ghz) output ip3 vs. output tone power 20 25 30 35 40 45 50 55 60 0 2 4 6 8 0 dbm 10 dbm 20 dbm ip3 (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com absolute maximum ratings drain bias voltage (vdd) +14 vdc gate bias voltage (vgg1) -3 to 0 vdc gate bias voltage (vgg2) +4 to +7v rf i nput p ower ( rfin )(vdd = +12v vdc) +25 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 106 m w /c above 85 c) 6.9 w thermal r esistance (channel to die bottom) 9.4 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) i dd (ma) 11.5 375 12.0 400 12.5 430 typical supply current vs. vdd ele ct ros tat i c sensi t i v e d e v i c e o b ser v e han d lin g pre caut ions HMC637 v03.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no t es : 1. a ll d imensions in in c hes [ millime t ers ] 2. d ie t hi ck ness is 0.004 (0.100) 3. ty pi ca l b on d p ad is 0.004 (0.100) s qua re 4. b on d p ad me ta li zat ion : g ol d 5. back si d e me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d 7. no c onne ct ion re qu ire d for u nl ab ele d b on d p ad s 8. o v er a ll d ie si z e is .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC637 v03.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad descriptions HMC637 v03.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz p ad n umber f unction description i nterface s chematic 1 in this pad is dc coupled and matched to 50 o hms. blocking capacitor is required. 2 vgg2 gate control 2 for amplifer. attach bypass capacitors per application circuit herein. f or nominal operation +6v should be applied to vgg2. 3 acg1 l ow frequency termination. attach bypass capacitor per application circuit herein. 4 acg2 l ow frequency termination. attach bypass capacitor per application circuit herein. 5 o ut & vdd rf output for amplifer. connect dc bias (vdd) network to provide drain current ( i dd). s ee application circuit herein. 6, 7 acg3, acg4 l ow frequency termination. attach bypass capacitor per application circuit herein. 8 vgg1 gate control 1 for amplifer. attach bypass capacitors per application circuit herein. p lease follow mmi c amplifer biasing p rocedure application note. die bottom g n d die bottom must be connected to rf /dc ground.
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500ma assembly diagram HMC637 v03.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab HMC637 v03.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz
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